Mechanical layer compaction for dispersion processed nanoparticulate zinc oxide thin film transistors

被引:10
作者
Bubel, S. [1 ]
Schmechel, R.
机构
[1] Univ Duisburg Essen, Fac Engn, D-47057 Duisburg, Germany
关键词
Zinc oxide; Dispersion; Polyvinylpyrrolidone; Thin film transistor; ZNO NANOPARTICLES; TEMPERATURE; AMBIENT; TFTS;
D O I
10.1016/j.mee.2012.02.044
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using rolling as a roll-to-roll compatible compaction process for solution processable electronics, we demonstrate improved layer morphology and field effect transistor performance of nanoparticulate zinc oxide (ZnO) thin films. Semiconducting ZnO layers have been processed from a polyvinylpyrrolidone (PVP) stabilized nanoparticulate dispersion at low temperatures. Maximum saturation mobilities of 7 x 10(-3) cm(2)/V s, improvements in mobility of more than one order of magnitude and a reduction in threshold voltage by more than 30% are shown. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:36 / 39
页数:4
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