Morphological impact of zinc oxide layers on the device performance in thin-film transistors

被引：38

作者：

Faber, Hendrik ^{[1
]}

Klaumuenzer, Martin ^{[2
]}

Voigt, Michael ^{[2
]}

Galli, Diana ^{[1
]}

Vieweg, Benito F. ^{[3
]}

Peukert, Wolfgang ^{[2
]}

Spiecker, Erdmann ^{[3
]}

Halik, Marcus ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Organ Mat & Devices OMD, Dept Mat Sci, D-91058 Erlangen, Germany

[2] Univ Erlangen Nurnberg, Inst Particle Technol, Dept Chem & Biol Engn, D-91058 Erlangen, Germany

[3] Univ Erlangen Nurnberg, Ctr Nanoanal & Electron Microscopy CENEM, Dept Mat Sci, D-91058 Erlangen, Germany

来源：

NANOSCALE | 2011年 / 3卷 / 03期

关键词：

FIELD-EFFECT TRANSISTORS; SPRAY-PYROLYSIS; PRINTED ELECTRONICS; ZNO NANOPARTICLES; SOLAR-CELLS; ENERGY;

D O I：

10.1039/c0nr00800a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Zinc oxide thin-films are prepared either by spin coating of an ethanolic dispersion of nanoparticles (NP, diameter 5 nm) or by spray pyrolysis of a zinc acetate dihydrate precursor. High-resolution electron microscopy studies reveal a monolayer of particles for the low temperature spin coating approach and larger crystalline domains of more than 30 nm for the spray pyrolysis technique. Thin-film transistor devices (TFTs) based on spray pyrolysis films exhibit higher electron mobilities of up to 24 cm(2) V-1 s(-1) compared to 0.6 cm(2) V-1 s(-1) for NP based TFTs. These observations were dedicated to a reduced number of grain boundaries within the transistor channel.

引用

页码：897 / 899

页数：3

共 31 条

[1] Spray-Deposited Li-Doped ZnO Transistors with Electron Mobility Exceeding 50 cm2/Vs [J].

Adamopoulos, George ;

Bashir, Aneeqa ;

Thomas, Stuart ;

Gillin, William P. ;

Georgakopoulos, Stamatis ;

Shkunov, Maxim ;

Baklar, Mohamed A. ;

Stingelin, Natalie ;

Maher, Robert C. ;

Cohen, Lesley F. ;

Bradley, Donal D. C. ;

Anthopoulos, Thomas D. .

ADVANCED MATERIALS, 2010, 22 (42) :4764-+

[2] Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air [J].

Adamopoulos, George ;

Bashir, Aneeqa ;

Woebkenberg, Paul H. ;

Bradley, Donal D. C. ;

Anthopoulos, Thomas D. .

APPLIED PHYSICS LETTERS, 2009, 95 (13)

[3] High-Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere [J].

Bashir, Aneeqa ;

Woebkenberg, Paul H. ;

Smith, Jeremy ;

Ball, James M. ;

Adamopoulos, George ;

Bradley, Donal D. C. ;

Anthopoulos, Thomas D. .

ADVANCED MATERIALS, 2009, 21 (21) :2226-+

[4] Organic materials for printed electronics [J].

Berggren, M. ;

Nilsson, D. ;

Robinson, N. D. .

NATURE MATERIALS, 2007, 6 (01) :3-5

[5] Integration of ZnO microcrystals with tailored dimensions forming light emitting diodes and UV photovoltaic cells [J].

Cole, Jesse J. ;

Wang, Xinyu ;

Knuesel, Robert J. ;

Jacobs, Heiko O. .

NANO LETTERS, 2008, 8 (05) :1477-1481

[6] The influence of the precursor concentration on the properties of SnO2 thin films [J].

Enesca, Alexandru ;

Duta, Anca .

THIN SOLID FILMS, 2010, 519 (02) :568-572

[7] Low-Temperature Solution-Processed Memory Transistors Based on Zinc Oxide Nanoparticles [J].

Faber, Hendrik ;

Burkhardt, Martin ;

Jedaa, Abdesselam ;

Kaelblein, Daniel ;

Klauk, Hagen ;

Halik, Marcus .

ADVANCED MATERIALS, 2009, 21 (30) :3099-+

[8] Recent advances in ZnO transparent thin film transistors [J].

Fortunato, E ;

Barquinha, P ;

Pimentel, A ;

Gonçalves, A ;

Marques, A ;

Pereira, L ;

Martins, R .

THIN SOLID FILMS, 2005, 487 (1-2) :205-211

[9] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

[10] Fabrication of gas sensing devices with ZnO nanostructure by the low-temperature oxidation of zinc particles [J].

Hsueh, Ting-Jen ;

Hsu, Cheng-Liang .

SENSORS AND ACTUATORS B-CHEMICAL, 2008, 131 (02) :572-576

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