Spray-Deposited Li-Doped ZnO Transistors with Electron Mobility Exceeding 50 cm2/Vs

被引：107

作者：

Adamopoulos, George ^{[1
,2
]}

Bashir, Aneeqa ^{[1
,2
]}

Thomas, Stuart ^{[1
,2
]}

Gillin, William P. ^{[3
]}

Georgakopoulos, Stamatis ^{[4
]}

Shkunov, Maxim ^{[4
]}

Baklar, Mohamed A. ^{[5
,6
]}

Stingelin, Natalie ^{[5
,6
]}

Maher, Robert C. ^{[1
,2
]}

Cohen, Lesley F. ^{[1
,2
]}

Bradley, Donal D. C. ^{[1
,2
]}

Anthopoulos, Thomas D. ^{[1
,2
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Dept Phys, London SW7 2BZ, England

[2] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Ctr Plast Elect, London SW7 2BZ, England

[3] Queen Mary Univ London, Dept Phys, London E1 4NS, England

[4] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

[5] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London Royal Sch Mines, London SW7 2AZ, England

[6] Univ London Imperial Coll Sci Technol & Med, Ctr Plast Elect, London Royal Sch Mines, London SW7 2AZ, England

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 42期

基金：

英国工程与自然科学研究理事会;

关键词：

THIN-FILM TRANSISTORS; AMORPHOUS OXIDE SEMICONDUCTORS; FIELD-EFFECT TRANSISTORS; ZINC-OXIDE; ROOM-TEMPERATURE;

D O I：

10.1002/adma.201001444

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ambient spray pyrolysis is used for the deposition of high quality polycrystalline ZnO films utilizing blends of precursor solutions based on Zinc and Lithium acetates and the demonstration of n-channel thin-film transistors with electron mobility exceeding 50 cm(2)/Vs (see figure).

引用

页码：4764 / +

页数：7

共 30 条

[1] Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air [J].

Adamopoulos, George ;

Bashir, Aneeqa ;

Woebkenberg, Paul H. ;

Bradley, Donal D. C. ;

Anthopoulos, Thomas D. .

APPLIED PHYSICS LETTERS, 2009, 95 (13)

[2] Toward High-Performance Amorphous GIZO TFTs [J].

Barquinha, P. ;

Pereira, L. ;

Goncalves, G. ;

Martins, R. ;

Fortunato, E. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (03) :H161-H168

[3] High-Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere [J].

Bashir, Aneeqa ;

Woebkenberg, Paul H. ;

Smith, Jeremy ;

Ball, James M. ;

Adamopoulos, George ;

Bradley, Donal D. C. ;

Anthopoulos, Thomas D. .

ADVANCED MATERIALS, 2009, 21 (21) :2226-+

[4] Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination method [J].

Cheng, Hua-Chi ;

Chen, Chia-Fu ;

Tsay, Chien-Yie .

APPLIED PHYSICS LETTERS, 2007, 90 (01)

[5] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J].

DAVIS, EA ;

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1970, 22 (179) :903-&

[6] Transparent thin-film transistors with zinc indium oxide channel layer [J].

Dehuff, NL ;

Kettenring, ES ;

Hong, D ;

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Park, CH ;

Keszler, DA .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)

[7] Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs [J].

Fortunato, E. ;

Barquinha, P. ;

Pimentel, A. ;

Pereira, L. ;

Goncalves, G. ;

Martins, R. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2007, 1 (01) :R34-R36

[8] High field-effect mobility zinc oxide thin film transistors produced at room temperature [J].

Fortunato, E ;

Pimentel, A ;

Pereira, L ;

Gonçalves, A ;

Lavareda, G ;

Aguas, H ;

Ferreira, I ;

Carvalho, CN ;

Martins, R .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 :806-809

[9] Stability of transparent zinc tin oxide transistors under bias stress [J].

Goerrn, P. ;

Hoelzer, P. ;

Riedl, T. ;

Kowalsky, W. ;

Wang, J. ;

Weimann, T. ;

Hinze, P. ;

Kipp, S. .

APPLIED PHYSICS LETTERS, 2007, 90 (06)

[10] APPLICATION OF ZINC-OXIDE VARISTORS [J].

GUPTA, TK .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (07) :1817-1840

← 1 2 3 →