Luminescent silicon carbide nanocrystallites in 3C-SiC/polystyrene films

被引:39
作者
Fan, JY
Wu, XL [1 ]
Kong, R
Qiu, T
Huang, GS
机构
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.1914962
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report optical emission of SiC nanocrystallite films, which clearly shows the quantum confinement-effect. Bulk polycrystalline 3C-SiC was first electrochemically etched and then the fabricated porous silicon carbide was ultrasonically treated in water or toluene suspension to disperse into colloidal nanoparticles. Transmission electron microscopy images clearly show that the colloidal nanoparticles have 3C-SiC lattice structure with sizes varying from about 6 nm down to below 1 nm. The suspension of 3C-SiC nanocrystallites exhibits ultrabright emission with wavelengths ranging from 400 to 520 nm when the excitation wavelength varies from 250 to 480 nm, in accordance with the quantum confinement effect. By adding 'polystyrene to the toluene suspension containing SiC nanoparticles and coating the mixing solution onto a Si wafer, we obtain the SiC/polystyrene films that luminesce. (c) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
相关论文
共 31 条
[1]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[2]   PHOTOLUMINESCENCE FROM POROUS SILICON BY INFRARED MULTIPHOTON EXCITATION [J].
CHIN, RP ;
SHEN, YR ;
PETROVAKOCH, V .
SCIENCE, 1995, 270 (5237) :776-778
[3]   The structural and luminescence properties of porous silicon [J].
Cullis, AG ;
Canham, LT ;
Calcott, PDJ .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :909-965
[4]   Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization [J].
Derycke, V ;
Soukiassian, PG ;
Amy, F ;
Chabal, YJ ;
D'Angelo, MD ;
Enriquez, HB ;
Silly, MG .
NATURE MATERIALS, 2003, 2 (04) :253-258
[5]   Quantum size effects on exciton states in indirect-gap quantum dots [J].
Feng, DH ;
Xu, ZZ ;
Jia, TQ ;
Li, XX ;
Gong, SQ .
PHYSICAL REVIEW B, 2003, 68 (03)
[6]   Photoluminescence studies of SiC nanocrystals embedded in a SiO2 matrix [J].
Guo, YP ;
Zheng, JC ;
Wee, ATS ;
Huan, CHA ;
Li, K ;
Pan, JS ;
Feng, ZC ;
Chua, SJ .
CHEMICAL PHYSICS LETTERS, 2001, 339 (5-6) :319-322
[7]   LUMINESCENT COLLOIDAL SILICON SUSPENSIONS FROM POROUS SILICON [J].
HEINRICH, JL ;
CURTIS, CL ;
CREDO, GM ;
KAVANAGH, KL ;
SAILOR, MJ .
SCIENCE, 1992, 255 (5040) :66-68
[8]   Silicon-based visible light-emitting devices integrated into microelectronic circuits [J].
Hirschman, KD ;
Tsybeskov, L ;
Duttagupta, SP ;
Fauchet, PM .
NATURE, 1996, 384 (6607) :338-341
[9]   MICROSTRUCTURE AND OPTICAL-PROPERTIES OF FREESTANDING POROUS SILICON FILMS - SIZE DEPENDENCE OF ABSORPTION-SPECTRA IN SI NANOMETER-SIZED CRYSTALLITES [J].
KANEMITSU, Y ;
UTO, H ;
MASUMOTO, Y ;
MATSUMOTO, T ;
FUTAGI, T ;
MIMURA, H .
PHYSICAL REVIEW B, 1993, 48 (04) :2827-2830
[10]   THE LUMINESCENCE OF POROUS SI - THE CASE FOR THE SURFACE-STATE MECHANISM [J].
KOCH, F ;
PETROVAKOCH, V ;
MUSCHIK, T .
JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) :271-281