Deposition of tantalum oxide films by ArF excimer laser ablation

被引：17

作者：

Nishimura, Y ^{[1
]}

Shinkawa, A ^{[1
]}

Ujita, H ^{[1
]}

Tsuji, M ^{[1
]}

Nakamura, M ^{[1
]}

机构：

[1] Kyushu Univ, Inst Adv Mat Study, Fukuoka 8168580, Japan

来源：

APPLIED SURFACE SCIENCE | 1998年 / 136卷 / 1-2期

关键词：

laser ablation; thin film growth; beta-Ta2O5; tantalum oxides; AFM;

D O I：

10.1016/S0169-4332(98)00332-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Effect of substrate temperatures has been studied for the deposition of tantalum oxide films by ArF excimer laser ablation. Orthorhombic tantalum pentaoxide film (beta-Ta2O5) were formed at substrate temperatures above 650 degrees C. Small grains of beta-Ta2O5 deposited densely on the film obtained at 700 degrees C. Surface roughness of the films increased with raising substrate temperatures. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：22 / 28

页数：7

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