Photodetection in silicon beyond the band edge with surface states

被引：95

作者：

Baehr-Jones, T.

Hochberg, M. ^{[1
]}

Scherer, A. ^{[2
]}

机构：

[1] Univ Washington, Dept Elect Engn, Paul Allen Ctr, Seattle, WA 98195 USA

[2] CALTECH, Dept Appl Phys, Pasadena, CA 91125 USA

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 03期

关键词：

D O I：

10.1364/OE.16.001659

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are the two main technological hurdles before silicon can become a comprehensive platform for integrated optics. We report on a photocurrent in unimplanted SOI ridge waveguides, which we attribute to surface state absorption. By electrically contacting the waveguides, a photodetector with a responsivity of 36 mA/W and quantum efficiency of 2.8% is demonstrated. The response is shown to have minimal falloff at speeds of up to 60 Mhz.

引用

收藏

页码：1659 / 1668

页数：10

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