Oxide thickness dependence of energy shifts in the Si 2p levels for the SiO2/Si structure, and its elimination by a palladium overlayer

The energy difference between the oxide and substrate Si 2p peaks for silicon oxide/Si structures increases with the oxide thickness. The dependence of the energy shift on the oxide thickness almost disappears with the deposition of a thin palladium overlayer, because of the avoidance of the surface charging effect due to photoemission and because of the nearly constant energy shift resulting from extra atomic relaxation. The true chemical shift of silicon oxide layers thicker than 2 nm is determined to be similar to 3.8 eV. For the thickness dependence of the oxide Si 2p energy, the extra atomic relaxation and charging effect are dominant for oxide layers thinner than similar to 2 nm and thicker than similar to 4 nm, respectively. In the intermediate thickness region, both the effects are important. (C) 1998 American Institute of Physics.