Local Electronic Properties of Graphene on a BN Substrate via Scanning Tunneling Microscopy

被引：529

作者：

Decker, Regis ^{[1
,2
]}

Wang, Yang ^{[1
]}

Brar, Victor W. ^{[1
,2
]}

Regan, William ^{[1
]}

Tsai, Hsin-Zon ^{[1
]}

Wu, Qiong ^{[1
]}

Gannett, William ^{[1
,2
]}

Zettl, Alex ^{[1
,2
]}

Crommie, Michael F. ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

NANO LETTERS | 2011年 / 11卷 / 06期

基金：

瑞士国家科学基金会; 美国国家科学基金会;

关键词：

Graphene; boron nitride; STM; Moire; HIGH-QUALITY; SPECTROSCOPY;

D O I：

10.1021/nl2005115

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The use of boron nitride (BN) as a substrate for graphene nanodevices has attracted much interest since the recent report that BN greatly improves the mobility of charge carriers in graphene compared to standard SiO2 substrates. We have explored the local microscopic properties of graphene on a BN substrate using scanning tunneling microscopy. We find that BN substrates result in extraordinarily flat graphene layers that display microscopic Moire patterns arising from the relative orientation of the graphene and BN lattices. Gate-dependent dI/dV spectra of graphene on BN exhibit spectroscopic features that are sharper than those obtained for graphene on SiO2. We observe a significant reduction in local microscopic charge inhomogeneity for graphene on BN compared to graphene on SiO2.

引用

页码：2291 / 2295

页数：5

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