Elliot-Yafet Mechanism in Graphene

被引：95

作者：

Ochoa, H. ^{[1
]}

Castro Neto, A. H. ^{[2
,3
,4
]}

Guinea, F. ^{[1
]}

机构：

[1] CSIC, Inst Ciencia Mat Madrid, Madrid 28049, Spain

[2] Natl Univ Singapore, Graphene Res Ctr, Singapore 117542, Singapore

[3] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[4] Boston Univ, Dept Phys, Boston, MA 02215 USA

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 108卷 / 20期

关键词：

30;

D O I：

10.1103/PhysRevLett.108.206808

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The differences between spin relaxation in graphene and in other materials are discussed. For relaxation by scattering processes, the Elliot-Yafet mechanism, the relation between the spin and the momentum scattering times, acquires a dependence on the carrier density, which is independent of the scattering mechanism and the relation between mobility and carrier concentration. This dependence puts severe restrictions on the origin of the spin relaxation in graphene. The density dependence of the spin relaxation allows us to distinguish between ordinary impurities and defects which modify locally the spin-orbit interaction.

引用

页数：5

共 29 条

[1] Boundary conditions for Dirac fermions on a terminated honeycomb lattice [J].