Study on MoO3-x films deposited by reactive sputtering for organic light-emitting diodes

被引：22

作者：

Oka, Nobuto ^{[1
]}

Watanabe, Hiroki ^{[1
]}

Sato, Yasushi ^{[1
]}

Yamaguchi, Hiroshi ^{[2
]}

Ito, Norihiro ^{[3
]}

Tsuji, Hiroya ^{[3
]}

Shigesato, Yuzo ^{[1
]}

机构：

[1] Aoyama Gakuin Univ, Grad Sch Sci & Engn, Kanagawa 2298558, Japan

[2] Aoyama Gakuin Univ, Ctr Instrumental Anal, Kanagawa 2298558, Japan

[3] Panason Elect Works Ltd, Adv Technol Dev Lab, Osaka 5718686, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2010年 / 28卷 / 04期

关键词：

MOLYBDENUM TRIOXIDE; METAL-OXIDES; LAYER;

D O I：

10.1116/1.3328822

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The authors investigate the role of reduced molybdenum trioxide [MoO3-x (x <= 1)] films in organic light-emitting diodes, particularly from the viewpoint of the oxidation state of Mo. MoO3-x films were deposited by reactive sputtering under a mixture of argon (Ar) and oxygen (O-2). The O-2 gas-flow ratio (GFR) [O-2/(Ar+O-2)] was adjusted between 10% and 100%. Mo with six, five, and four valence electrons was detected in MoO3-x film deposited with an O-2 GFR of 10% and 12.5%, whereas, under higher O-2 GFRs, only six valence electrons for Mo in the MoO3-x film were detected. N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (alpha-NPD) layer, hole-transport material, were deposited over the MoO3-x layer by subsequent vacuum evaporation. At the alpha-NPD/MoO3-x interface, it was found that alpha-NPD cations were generated and that MoO3-x was reduced, which provided evidence of charge transfer across the interface by Raman spectroscopy and x-ray photoelectron spectroscopy. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3328822]

引用

页码：886 / 889

页数：4

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