Minimum of spin-orbit coupling in two-dimensional structures

被引:62
作者
Sherman, EY [1 ]
机构
[1] Graz Univ, Inst Theoret Phys, A-8010 Graz, Austria
关键词
D O I
10.1103/PhysRevB.67.161303
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Spin-orbit coupling in symmetrically doped Si/Si1-xGex quantum wells is investigated theoretically. Unavoidable fluctuations of concentration of dopant ions lead to a finite spin-orbit coupling there even if the mean dopant concentrations are equal on both sides of the well. This effect, being a realization of the minimal possible strength of spin-orbit coupling, leads to a measurable intensity of electric-dipole spin resonance, that is, to electron spin-flip transitions caused by electric field of an incident electromagnetic wave.
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页数:4
相关论文
共 27 条
[1]   Coupled quantum dots as quantum gates [J].
Burkard, G ;
Loss, D ;
DiVincenzo, DP .
PHYSICAL REVIEW B, 1999, 59 (03) :2070-2078
[2]  
BYCHKOV YA, 1984, JETP LETT+, V39, P78
[3]   ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].
DATTA, S ;
DAS, B .
APPLIED PHYSICS LETTERS, 1990, 56 (07) :665-667
[4]  
DYAKONOV MI, 1986, SOV PHYS SEMICOND+, V20, P110
[5]  
Efros A. L., 1989, ELECT PROPERTIES DOP
[6]   Spin relaxation of conduction electrons [J].
Fabian, J ;
Das Sarma, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (04) :1708-1715
[7]  
Flatté ME, 2002, NANOSCI TECHNOL, P107
[8]   Removal of spin degeneracy in p-SiGe quantum wells demonstrated by spin photocurrents -: art. no. 075328 [J].
Ganichev, SD ;
Rössler, U ;
Prettl, W ;
Ivchenko, EL ;
Bel'kov, VV ;
Neumann, R ;
Brunner, K ;
Abstreiter, G .
PHYSICAL REVIEW B, 2002, 66 (07) :753281-753287
[9]   SPIN ORIENTATION AT SEMICONDUCTOR HETEROINTERFACES [J].
JUSSERAND, B ;
RICHARDS, D ;
ALLAN, G ;
PRIESTER, C ;
ETIENNE, B .
PHYSICAL REVIEW B, 1995, 51 (07) :4707-4710
[10]   Spin relaxation in semiconductor quantum dots [J].
Khaetskii, AV ;
Nazarov, YV .
PHYSICAL REVIEW B, 2000, 61 (19) :12639-12642