Microphotoluminescence spectroscopy of vertically stacked InxGa1-xAs/GaAs quantum wires

被引：20

作者：

Cingolani, R

Sogawa, F

Arakawa, Y

Rinaldi, R

DeVittorio, M

Passaseo, A

Taurino, A

Catalano, M

Vasanelli, L

机构：

[1] Univ Tokyo, Inst Ind Sci, Tokyo, Japan

[2] Univ Lecce, Dipartimento Sci Mat, Unita INFM, I-73100 Lecce, Italy

[3] Univ Lecce, Dipartimento Sci Mat, CNR, Ist IME, I-73100 Lecce, Italy

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.58.1962

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Disorder and spectral broadening of vertically stacked InGaAs/GaAs V-grooved quantum wires have been investigated by means of microprobe luminescence. We show that the main spectral broadening mechanism originates from monolayer fluctuations at the bottom of the wire. A direct evidence of monolayer height islands of area 40x40 nm formed at the bottom of the grooves is provided by atomic force microscopy. Lateral and vertical wire-to-wire fluctuations are found to be negligible on the micron scale.

引用

收藏

页码：1962 / 1966

页数：5

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