High spatial resolution spectroscopy of a single V-shaped quantum wire

被引:57
作者
Bellessa, J
Voliotis, V
Grousson, R
Wang, XL
Ogura, M
Matsuhata, H
机构
[1] UNIV PARIS 07,F-75251 PARIS 05,FRANCE
[2] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN
关键词
D O I
10.1063/1.120094
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on microscopic photoluminescence of a single V-shaped AlGaAs/GaAs quantum wire. The experiments are performed at low temperature by selectively exciting 1 mu m(2) of the sample. The main photoluminescence line is split into sharp peaks of width less than 0.5 meV and separated by a few meV, The energy position and the Intensity of the peaks are characteristic of the scanned quantum wire. First microphotoluminescence results suggest that localization phenomena are predominant in the quantum wire. They are due to the formation of extended monolayer-step islands, larger than the exciton radius, as in the case of high-quality quantum wells. (C) 1997 American Institute of Physics. [S0003-6951(97)00343-4].
引用
收藏
页码:2481 / 2483
页数:3
相关论文
共 18 条
  • [1] AKIYAMA H, 1996, PHYS REV B, V53
  • [2] PATTERNED QUANTUM WELL HETEROSTRUCTURES GROWN BY OMCVD ON NON-PLANAR SUBSTRATES - APPLICATIONS TO EXTREMELY NARROW SQW LASERS
    BHAT, R
    KAPON, E
    HWANG, DM
    KOZA, MA
    YUN, CP
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 850 - 856
  • [3] EXCITON RELAXATION AND RADIATIVE RECOMBINATION IN SEMICONDUCTOR QUANTUM DOTS
    BOCKELMANN, U
    [J]. PHYSICAL REVIEW B, 1993, 48 (23): : 17637 - 17640
  • [4] 1D CHARGE CARRIER DYNAMICS IN GAAS QUANTUM WIRES - CARRIER CAPTURE, RELAXATION, AND RECOMBINATION
    CHRISTEN, J
    KAPON, E
    GRUNDMANN, M
    HWANG, DM
    JOSCHKO, M
    BIMBERG, D
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1992, 173 (01): : 307 - 321
  • [5] Fine structure splitting in the optical spectra of single GaAs quantum dots
    Gammon, D
    Snow, ES
    Shanabrook, BV
    Katzer, DS
    Park, D
    [J]. PHYSICAL REVIEW LETTERS, 1996, 76 (16) : 3005 - 3008
  • [6] Microroughness and exciton localization in (Al,Ga)As/GaAs quantum wells
    Grousson, R
    Voliotis, V
    Grandjean, N
    Massies, J
    Leroux, M
    Deparis, C
    [J]. PHYSICAL REVIEW B, 1997, 55 (08): : 5253 - 5258
  • [7] CATHODOLUMINESCENCE OF SINGLE QUANTUM WIRES AND VERTICAL QUANTUM-WELLS GROWN ON A SUBMICRON GRATING
    GUSTAFSSON, A
    SAMUELSON, L
    MALM, JO
    VERMEIRE, G
    DEMEESTER, P
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (06) : 695 - 697
  • [8] Low-pressure organometallic chemical vapor deposition of quantum wires on V-grooved substrates
    Gustafsson, A
    Reinhardt, F
    Biasiol, G
    Kapon, E
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (25) : 3673 - 3675
  • [9] STIMULATED-EMISSION IN SEMICONDUCTOR QUANTUM WIRE HETEROSTRUCTURES
    KAPON, E
    HWANG, DM
    BHAT, R
    [J]. PHYSICAL REVIEW LETTERS, 1989, 63 (04) : 430 - 433
  • [10] PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS
    MARZIN, JY
    GERARD, JM
    IZRAEL, A
    BARRIER, D
    BASTARD, G
    [J]. PHYSICAL REVIEW LETTERS, 1994, 73 (05) : 716 - 719