Structural, optical and electrical properties of porous silicon impregnated with SnO2:Sb

被引：11

作者：

Elhouichet, H ^{[1
]}

Moadhen, A ^{[1
]}

Oueslati, M ^{[1
]}

Romdhane, S ^{[1
]}

Roger, JA ^{[1
]}

Bouchriha, H ^{[1
]}

机构：

[1] Fac Sci Tunis, Equipe Spect Raman, Tunis 2092, Tunisia

来源：

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 9 | 2005年 / 2卷 / 09期

关键词：

D O I：

10.1002/pssc.200461165

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The incorporation of antimony doped tin oxide (SnO2:Sb), prepared from the sol gel method, into luminescent porous silicon (PS) layers is investigated. Characterisation of the resulting structures by photoluminescence (PL) is presented. It shows that the recuperated PL signal is important and the solid phase does not degrade the skeleton of PS layer with porosity less than 70%. However, for highly porous layers (80%), it was found that the recuperated PL signal is low and the PS skeleton is strongly degraded. Preliminary characterizations of the electrical properties of the resulting nanocomposite structure are presented. The current - voltage characteristic of the SnO2:Sb/PS structure is well fitted at low voltage using the Richardson-Schottky diode equation and taking into account of a series resistance R-s. For voltage above 1 V, we show that traps control transport. Electroluminescence (EL) is observed with a threshold at 6 V. All the parameters of the diode are determined and discussed. A diagram of band energy of SnO2:Sb/PS/c-Si is proposed. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3349 / 3353

页数：5

共 19 条

[1] BAND ALIGNMENT AND CARRIER INJECTION AT THE POROUS-SILICON CRYSTALLINE-SILICON INTERFACE [J].

BENCHORIN, M ;

MOLLER, F ;

KOCH, F .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) :4482-4488

[2]

Braun D., 1982, APPL PHYS LETT, V58

[3] MORPHOLOGY OF SNO2 THIN-FILMS OBTAINED BY THE SOL-GEL TECHNIQUE [J].

CHATELON, JP ;

TERRIER, C ;

BERNSTEIN, E ;

BERJOAN, R ;

ROGER, JA .

THIN SOLID FILMS, 1994, 247 (02) :162-168

[4]

COLVIN VL, 1994, NATURE, V370, P354, DOI 10.1038/370354a0

[5] ELECTROLUMINESCENCE FROM CDSE QUANTUM-DOT POLYMER COMPOSITES [J].

DABBOUSI, BO ;

BAWENDI, MG ;

ONITSUKA, O ;

RUBNER, MF .

APPLIED PHYSICS LETTERS, 1995, 66 (11) :1316-1318

[6] ITO spin-coated porous silicon structures [J].

Daoudi, K ;

Sandu, CS ;

Moadhen, A ;

Ghica, C ;

Canut, B ;

Teodorescu, VS ;

Blanchin, MG ;

Roger, JA ;

Oueslati, M ;

Bessaïs, B .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 101 (1-3) :262-265

[7] Photoluminescence and I-V characteristics of a CdS-nanoparticles-porous-silicon heterojunction [J].

Deshmukh, NV ;

Bhave, TM ;

Ethiraj, AS ;

Sainkar, SR ;

Ganesan, V ;

Bhoraskar, SV ;

Kulkarni, SK .

NANOTECHNOLOGY, 2001, 12 (03) :290-294

[8] Transport mechanisms and energy band diagram in ZnO/porous Si light-emitting diodes [J].

Dimova-Malinovska, D ;

Nikolaeva, M .

VACUUM, 2002, 69 (1-3) :227-231

[9] High luminescent Eu3+ and Tb3+ doped SnO2 sol-gel derived films deposited on porous silicon [J].

Elhouichet, H ;

Moadhen, A ;

Férid, M ;

Oueslati, M ;

Canut, B ;

Roger, JA .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 197 (02) :350-354

[10] Evidence of phase transition in porous silicon [J].

Elhouichet, H ;

Oueslati, M .

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2001, 16 (02) :87-90

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