Electromigration behavior of eutectic SnPb solder

被引：32

作者：

Choi, JY ^{[1
]}

Lee, SS ^{[1
]}

Joo, YC ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 12期

关键词：

electromigration; SnPb solder;

D O I：

10.1143/JJAP.41.7487

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electromigration characteristics of eutectic SnPb solder were studied using thin stripe-type test structures. Significant changes in the microstructure were observed after the electromigration test, in which the temperature and the current density were varied front 80 to 100degreesC and from 4.6 to 8.7 x 10(4) A/cm(2), respectively. While voids or local thinning were found near the cathode end, hillocks were mainly observed near the anode end. From resistance measurements, it was calculated that the activation energy of the eutectic SnPb solder for electromigration was 0.77 eV. The dominant migrating element along the electron flow at 100degreesC was Pb.

引用

页码：7487 / 7490

页数：4

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