Electromigration of eutectic SnPb solder interconnects for flip chip technology

被引:166
作者
Lee, TY [1 ]
Tu, KN
Kuo, SM
Frear, DR
机构
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
[2] Motorola Inc, Interconnect Syst Labs, Tempe, AZ 85284 USA
关键词
D O I
10.1063/1.1342023
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electromigration of eutectic SnPb solder interconnects between a Si chip and a FR4 substrate was studied at 120 degreesC for up to 324 h with current stressing of 10(4) amp/cm(2). Hillocks were observed at the anode and voids at the cathode. The dominant diffusing species was found to be Pb, confirmed by its accumulation at the anode. Diffusion markers were used to measure the electromigration flux and calculate the effective charge of atomic diffusion in the solder. Extensive microstructural evolution was also observed in the two-phase solder alloy that occurred by a ripening process. (C) 2001 American Institute of Physics.
引用
收藏
页码:3189 / 3194
页数:6
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