Structure and electrical properties of bismuth thin films prepared by flash evaporation method

被引:32
作者
Duan, Xingkai [1 ]
Yang, Junyou [1 ]
Zhu, Wen [1 ]
Fan, Xi'an [1 ]
Xiao, Chengjing [1 ]
机构
[1] Huazhong Univ Sci & Technol, State Key Lab Mat Proc & Dies & Mould Technol, Wuhan 430074, Peoples R China
基金
中国国家自然科学基金;
关键词
bismuth; thin films; electrical properties; flash evaporation;
D O I
10.1016/j.matlet.2007.01.098
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Polycrystalline Bi thin films with thickness in the range 40-160 nm have been successfully deposited on glass substrates at 453 K by flash evaporation method for the first time. XRD and FE-SEM were performed to characterize their structure and surface morphology respectively. Electrical resistivity measurement was carried out in the temperature range 300-350 K. Hall coefficient, electron concentration and mobility were measured at 300 K. A distinctly oscillatory behavior has been observed for the electrical properties of the Bi thin films. (C) 2007 Elsevier B.V All rights reserved.
引用
收藏
页码:4341 / 4343
页数:3
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