An analysis of temperature dependent photoluminescence line shapes in InGaN

被引：111

作者：

Teo, KL ^{[1
]}

Colton, JS

Yu, PY

Weber, ER

Li, MF

Liu, W

Uchida, K

Tokunaga, H

Akutsu, N

Matsumoto, K

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Sci Mat, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Dept Mat Sci & Mineral Engn, Berkeley, CA 94720 USA

[4] Natl Univ Singapore, Dept Elect Engn, Ctr Optoelect, Singapore 11920, Singapore

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 12期

关键词：

D O I：

10.1063/1.122249

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) line shapes in InGaN multiple quantum well structures have been studied experimentally and theoretically between 10 and 300 K. The higher temperature PL spectra can be fitted quantitatively with a thermalized carrier distribution and a broadened joint-density-of-states. The low temperature PL line shapes suggest that carriers are not thermalized, as a result of localization by band-gap fluctuations. We deduce a localization energy of similar to 7 meV as compared with an activation energy of similar to 63 meV from thermal quenching of the PL intensity. We thus conclude that this activation energy and the band-gap fluctuation most likely have different origins. (C) 1998 American Institute of Physics.

引用

页码：1697 / 1699

页数：3

共 21 条

[1] Mechanism for thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy: Role of nonradiative defects [J].