Design considerations for 1.3μm emission of GaInNAs/GaAs strained quantum-well lasers

被引：10

作者：

Alexandropoulos, D ^{[1
]}

Adams, MJ ^{[1
]}

机构：

[1] Univ Essex, Dept Elect Engn Syst, Colchester CO4 3SQ, Essex, England

来源：

IEE PROCEEDINGS-OPTOELECTRONICS | 2003年 / 150卷 / 02期

关键词：

D O I：

10.1049/ip-opt:20030385

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors explore theoretically different indium and nitrogen compositions and well widths for 1.3 mum emission of GaInNAs strained quantum well lasers. The nitrogen-induced conduction band non-parabolicity is accounted for through the band anti-crossing model, and valence-band mixing effects and strain are treated exactly. Basic design rules are outlined not only on the basis of the emission wavelength but also in terms of optimal device operation.

引用

页码：105 / 109

页数：5

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