Read/write schemes analysis for novel complementary resistive switches in passive crossbar memory arrays

被引：42

作者：

Yu, Shimeng ^{[1
]}

Liang, Jiale

Wu, Yi

Wong, H-S Philip

机构：

[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 46期

基金：

美国国家科学基金会;

关键词：

TRANSITION;

D O I：

10.1088/0957-4484/21/46/465202

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Recently a prototype of complementary resistive switches has been proposed to solve the sneak-path problem in passive crossbar memory arrays. To further evaluate the potential of this novel cell structure for practical applications, we present a modeling analysis to capture its switching dynamics and analyze its unique read/write schemes. The model is corroborated by experimental data. We found a trade-off between the read voltage window and write voltage window. The constraint from avoiding disturbance on unselected cells is critical for proper functionality, which in turn limits the writing speed.

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