Structure and properties of silicon oxide films deposited in a dual microwave-rf plasma reactor

被引：23

作者：

Benissad, N

Aumaille, K

Granier, A

Goullet, A

机构：

[1] Inst Mat Jean Rouxel, Lab Plasmas & Couches Minces, F-44322 Nantes 03, France

[2] Univ Paris Sud, Phys Gaz & Plasmas Lab, F-91405 Orsay, France

来源：

THIN SOLID FILMS | 2001年 / 384卷 / 02期

关键词：

silicon oxide; plasma processing and deposition; infrared spectroscopy; ellipsometry;

D O I：

10.1016/S0040-6090(00)01870-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The characterisation of SiOx thin films deposited from hexamethyldisiloxane in a microwave plasma reactor showed they were carbon containing and porous. With the aim of improving the film quality, the substrate holder was biased with the use of a 13.56-MHz radio-frequency power supply. Results on chemical structure, deposition rate and optical emission spectroscopy are reported. The rf-induced negative bias voltage affected both gas phase reactions and film composition. Moreover, it induced change in the deposition rate. (C) 2001 Elsevier Science B.V. All rights reserved.

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页码：230 / 235

页数：6

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