A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory

被引：48

作者：

Chen, Shih-Ching ^{[1
]}

Chang, Ting-Chang

Liu, Po-Tsun

Wu, Yung-Chun

Lin, Po-Shun

Tseng, Bae-Heng

Shy, Jang-Hung

Sze, S. M.

Chang, Chun-Yen

Lien, Chen-Hsin

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Kaohsiung 804, Taiwan

[4] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[5] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[6] Natl Chiao Tung Univ, Display Inst, Hsinchu 300, Taiwan

[7] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 300, Taiwan

[8] Natl Sun Yat Sen Univ, Inst Mat Sci & Engn, Kaohsiung 804, Taiwan

[9] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 09期

关键词：

nanowire (NW); nonvolatile memory; polysilicon (poly-Si); silicon-oxide-nitride-oxide-silicon (SONOS); thin-film transistor (TFT);

D O I：

10.1109/LED.2007.903885

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a polycrystalline silicon thin-film transistor consisting of silicon-oxide-nitride-oxide-silicon (SONOS) stack gate dielectric and nanowire (NW) channels was investigated for the applications of transistor and nonvolatile memory. The proposed device, which is named as NW SONOS-TFT, has superior electrical characteristics of transistor, including a higher drain current, a smaller threshold voltage (V-th), and a steeper subthreshold slope. Moreover, the NW SONOS-TFT also can exhibit high program/erase efficiency under adequate bias operation. The duality of both transistor and memory device for the NW SONOS-TFT can be attributed to the trigate structure and channel corner effect.

引用

页码：809 / 811

页数：3

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