Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels

被引：21

作者：

Wu, YC ^{[1
]}

Chang, TC

Liu, PT

Chen, CS

Tu, CH

Zan, HW

Tai, YH

Chang, CY

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Fukuoka 804, Taiwan

[3] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Ctr Nanosci & Nanotechnol, Kaohsiung, Fukuoka 804, Taiwan

[4] Natl Chiao Tung Univ, Dept Photon & Display Inst, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 10期

关键词：

lightly doped drain (LDD); nanowire; polysilicon; thin-film transistor (TFT);

D O I：

10.1109/TED.2005.856797

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This brief studies the electrical characteristics of a series of polysilicon thin-film transistors (poly-Si TFTs) with different numbers of multiple channels of various widths, with lightly doped drain (LDD) structures. The nanoscale TFT with ten 67-nm-wide split channels (M10) has superior and more uniform electrical characteristics than other TFTs. Additionally, experimental results reveal that the electrical performance of proposed TFTs enhances with each channel width decreasing, yielding a profile from a single-gate to tri-gate structure.

引用

页码：2343 / 2346

页数：4

共 17 条

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CHOI HJ, 1998, S VLSI TECH DIG, P38

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