Carbon nanotube electronics and optoelectronics

被引：28

作者：

Avouris, P ^{[1
]}

Afzali, A ^{[1
]}

Appenzeller, J ^{[1
]}

Chen, J ^{[1
]}

Freitag, M ^{[1
]}

Klinke, C ^{[1
]}

Lin, YM ^{[1
]}

Tsang, JC ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419208

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We discuss recent developments in our research on single carbon nanotube field-effect transistors and light emitting and detecting devices. Specifically, we show that by using either double gate devices, or selective charge-transfer doping, we can convert Schottky barrier CNTFETs into bulk-switched devices, ambipolar CNTFETs into unipolar devices, while at the same time enhance both the ON and OFF state device characteristics. Under ambipolar conditions CNTFETs can be used as light emitters via e-h recombination, while light irradiation of CNTFETs leads to photoconductivity. Thus, the CNTFET can be used as a high performance switch, a light source and a light detector.

引用

页码：525 / 529

页数：5

共 16 条

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