Composition control of barium strontium titanate thin films prepared by chemical vapor deposition

被引:14
作者
Kiyotoshi, M [1 ]
Eguchi, K [1 ]
Imai, K [1 ]
Arikado, T [1 ]
机构
[1] Toshiba Corp, Adv Microelect Ctr, Microelect Engn Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 08期
关键词
barium strontium titanate; BST; chemical vapor deposition; composition; kinetically limited condition; composition matching;
D O I
10.1143/JJAP.37.4487
中图分类号
O59 [应用物理学];
学科分类号
摘要
Composition control of barium strontium titanate thin films prepared by chemical vapor deposition using Ba(THD)(2), Sr(THD)(2), and Ti(THD)(2)(i-OC3H7)(2) (THD: 2,2,6,6-tetramethyl-3,5-heptanedionate) has been studied by investigating the effects of deposition temperature and the supply rates of metal sources. Although there were complicated correlations among the deposition rates of Ba, Sr, and Ti under kinetically limited conditions, the deposition rate ratio of Ba/Sr was linearly related to the partial pressure ratio of Ba(THD)(2)/Sr(THD)(2), and the ratio of Ti/(Ba + Sr) spontaneously approaches unity. In order to explain these characteristics, we proposed a model wherein the THD complex of Ba or Sr reacts with the THD complex of Ti and generates a dimer such as (THD)(2)Ba-O-Ti(THD)(2), and this dimer becomes the dominant precursor for chemical vapor deposition (CVD) under kinetically limited conditions.
引用
收藏
页码:4487 / 4492
页数:6
相关论文
共 19 条
[1]   Chemical vapor deposition of (Ba,Sr)TiO3 thin films for application in gigabit scale dynamic random access memories [J].
Eguchi, K ;
Kiyotoshi, M .
INTEGRATED FERROELECTRICS, 1997, 14 (1-4) :33-42
[2]  
HAYASHI S, 1994, S VLSI TECHN, P153
[3]   DEPOSITION OF EXTREMELY THIN (BA,SR)TIO3 THIN-FILMS FOR ULTRA-LARGE-SCALE INTEGRATED DYNAMIC RANDOM-ACCESS MEMORY APPLICATION [J].
HWANG, CS ;
PARK, SO ;
CHO, HJ ;
KANG, CS ;
KANG, HK ;
LEE, SI ;
LEE, MY .
APPLIED PHYSICS LETTERS, 1995, 67 (19) :2819-2821
[4]   SURFACE MORPHOLOGIES AND ELECTRICAL-PROPERTIES OF (BA,SR)TIO3 FILMS PREPARED BY 2-STEP DEPOSITION OF LIQUID SOURCE CHEMICAL-VAPOR-DEPOSITION [J].
KAWAHARA, T ;
YAMAMUKA, M ;
YUUKI, A ;
ONO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B) :5077-5082
[5]   STEP COVERAGE AND ELECTRICAL-PROPERTIES OF (BA, SR)TIO3 FILMS PREPARED BY LIQUID SOURCE CHEMICAL-VAPOR-DEPOSITION USING TIO(DPM)(2) [J].
KAWAHARA, T ;
YAMAMUKA, M ;
MAKITA, T ;
NAKA, J ;
YUUKI, A ;
MIKAMI, N ;
ONO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5129-5134
[6]  
KIYOTOSHI M, 1997, P 14 INT C EUROCVD 1, P1063
[7]  
Lee KP, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P907, DOI 10.1109/IEDM.1995.499363
[8]   LEARNING-DISABILITY AND IMPAIRMENT OF SYNAPTOGENESIS IN HTX-RATS WITH ARRESTED SHUNT-DEPENDENT HYDROCEPHALUS [J].
MIYAZAWA, T ;
SATO, K .
CHILDS NERVOUS SYSTEM, 1991, 7 (03) :121-128
[9]  
Nishioka Y, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P903, DOI 10.1109/IEDM.1995.499362
[10]  
OKUYAMA M, 1993, JPN J APPL PHYS, V32, P4078