Effects of a two-step rapid thermal annealing process on Mg-doped p-type GaN films grown by metalorganic chemical vapor deposition

被引：9

作者：

Ahn, KS ^{[1
]}

Kim, DJ ^{[1
]}

Moon, YT ^{[1
]}

Kim, HG ^{[1
]}

Park, SJ ^{[1
]}

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 01期

关键词：

D O I：

10.1116/1.1338554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-step rapid thermal annealing (RTA) process is proposed in order to improve the electrical properties, the crystal quality, and the surface roughness of Mg-doped p-type GaN films. In the two-step RTA process, the first low temperature step (600 degreesC) with a long annealing time (5 min) was followed by the second high temperature (950 degreesC) step With a short annealing time. These results show that the two-step RTA process significantly improves electrical properties and reduces the surface roughness of p-GaN compared to the one-step RTA process. (C) 2001 American Vacuum Society.

引用

页码：215 / 218

页数：4

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