Phase evolution in aluminum nitride thin films on Si(100) prepared by radio frequency magnetron sputtering

被引:42
作者
Choi, JH
Lee, JY [1 ]
Kim, JH
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[2] Chonnam Natl Univ, Dept Ceram Engn, Puk Gu, Kwangju 500757, South Korea
关键词
aluminum nitride; phase evolution; radio frequency sputtering; high-resolution transmission electron microscopy;
D O I
10.1016/S0040-6090(00)01859-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Aluminum nitride (AlN) thin films were deposited on Si(100) substrate using radio frequency (r.f.) magnetron sputtering. AN/Si interfaces were analyzed by selected-area electron diffraction, cross-sectional high-resolution transmission electron microscopy and Auger electron spectroscopy. The effects of increasing deposition times on the resultant AlN phase and composition, especially in the interface regions, were discussed. AlN film, deposited at r.f, power of 200 W and substrate temperature of 250 degreesC for 1 min, consists of two distinct layers of different phases. At the film/substrate interface area a 3.3-nm thick amorphous AIN with a small amount of oxygen was formed. A polycrystalline AIN phase oriented preferentially to the c-axis was observed in the rest of the film. As deposition time was increased to 2 min, the thickness of the amorphous AIN layer was decreased to 1.5 nn, indicating that the amorphous phase was crystallized during the increased deposition time. Lower substrate temperature of 150 degreesC also certified the trend of the decrease in the amorphous phase with increased deposition time. A heating effect on the substrate by bombardment of energetic neutralized and ions in the deposition ambient and the diffusion of the interface oxygen to the growing film would promote the surface activation for the crystallization. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:166 / 172
页数:7
相关论文
共 24 条
[1]  
BULLIS WM, 1991, DEFECTS SILICON, V2, P351
[2]   STUDY OF CHARGING AND DISSOCIATION OF SIO2 SURFACES BY AES [J].
CARRIERE, B ;
LANG, B .
SURFACE SCIENCE, 1977, 64 (01) :209-223
[3]   HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDIES ON LASER-ANNEALED UNSUPPORTED AMORPHOUS-GERMANIUM FILMS [J].
CESARI, C ;
NIHOUL, G ;
MARFAING, J ;
MUTAFTSCHIEV, B .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5199-5204
[4]   CONTAMINANTS ON CHEMICALLY ETCHED SILICON SURFACES - LEED-AUGER METHOD [J].
CHANG, CC .
SURFACE SCIENCE, 1970, 23 (02) :283-&
[5]  
CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P152
[6]   CONTROL OF PREFERRED ORIENTATION FOR ZNOX FILMS - CONTROL OF SELF-TEXTURE [J].
FUJIMURA, N ;
NISHIHARA, T ;
GOTO, S ;
XU, JF ;
ITO, T .
JOURNAL OF CRYSTAL GROWTH, 1993, 130 (1-2) :269-279
[7]   CHARACTERIZATION OF ALN FILMS ON SI [J].
GRAFE, V ;
NIESSNER, W ;
SCHALCH, D ;
SCHARMANN, A ;
WIESE, C .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1994, 145 (02) :527-537
[8]   ELECTRICAL-PROPERTIES OF SPUTTERED AIN FILMS AND INTERFACE ANALYSES BY AUGER-ELECTRON SPECTROSCOPY [J].
HANTZPERGUE, JJ ;
PAULEAU, Y ;
REMY, JC ;
ROPTIN, D ;
CAILLER, M .
THIN SOLID FILMS, 1981, 75 (02) :167-176
[9]  
LAMPERT MA, 1969, CURRENT INJECTION SO, P366
[10]   THE GROWTH-MECHANISM OF (10(1)OVER-BAR-0) ORIENTED ALN THIN-FILMS BY LOW-FREQUENCY PLASMA-ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION PROCESS [J].
MENG, GY ;
AZEMA, N ;
CROS, B ;
DURAND, J ;
COT, L .
JOURNAL OF CRYSTAL GROWTH, 1993, 129 (3-4) :610-620