CHARACTERIZATION OF ALN FILMS ON SI

被引:7
作者
GRAFE, V
NIESSNER, W
SCHALCH, D
SCHARMANN, A
WIESE, C
机构
[1] I. Physikalisches Institut, Justus-Liebig-Universität, Giessen
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1994年 / 145卷 / 02期
关键词
D O I
10.1002/pssa.2211450237
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Aluminium nitride films are deposited by reactive rf sputtering, and a wide variation of deposition parameters is examined. Optical and structural properties dependent on these parameters are studied, and e.g. the optical band gap, the degree of crystallinity, and the effects of hydrogen incorporation are determined. Electronic properties of the films are measured by applying X-ray photoelectron spectroscopy and electron energy loss spectroscopy. From these data an AlN energy level scheme was derived. Depth profiles of AlN on Si are measured mainly by secondary ion mass spectroscopy and photoelectron spectroscopy. They lead to the conclusion that the interfaces are relatively sharp (5 to 10 nm) if the film is deposited at moderate temperatures (< 500-degrees-C) and at moderate sputter powers (< 500 W).
引用
收藏
页码:527 / 537
页数:11
相关论文
共 10 条
  • [1] ELECTRONIC-STRUCTURE OF AN AIN FILM PRODUCED BY ION-IMPLANTATION, STUDIED BY ELECTRON-SPECTROSCOPY
    GAUTIER, M
    DURAUD, JP
    LEGRESSUS, C
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) : 574 - 580
  • [2] HYDROGENATION OF REACTIVELY SPUTTERED AINXOY FILMS
    GRAFE, V
    SCHALCH, D
    SCHARMANN, A
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 117 (01): : K23 - K27
  • [3] GRAFE V, 1994, THIN FILMS, P469
  • [4] CHARACTERIZATION OF SPUTTERED ALN FILMS BY PHOTOELECTRON-SPECTROSCOPY
    GRAFE, V
    REINHARDT, H
    SCHALCH, D
    SCHARMANN, A
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 136 (02): : K105 - K108
  • [5] DETERMINATION OF REFRACTIVE INDEX OF THIN DIELECTRIC FILMS
    HACSKAYLO, M
    [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1964, 54 (02) : 198 - &
  • [6] ELECTRONIC-STRUCTURE AND BONDING AT SIC/ALN AND SIC/BP INTERFACES
    LAMBRECHT, WRL
    SEGALL, B
    [J]. PHYSICAL REVIEW B, 1991, 43 (09) : 7070 - 7085
  • [7] TOTAL VALENCE-BAND DENSITIES OF STATES OF III-V AND II-VI COMPOUNDS FROM X-RAY PHOTOEMISSION SPECTROSCOPY
    LEY, L
    POLLAK, RA
    MCFEELY, FR
    KOWALCZY.SP
    SHIRLEY, DA
    [J]. PHYSICAL REVIEW B, 1974, 9 (02): : 600 - 621
  • [8] FORMATION OF AL-NITRIDE FILMS AT ROOM-TEMPERATURE BY NITROGEN ION-IMPLANTATION INTO ALUMINUM
    LIESKE, N
    HEZEL, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5806 - 5810
  • [9] ADHESION AND BONDING OF POLAR AND NONPOLAR SIC AND ALN SURFACES - TIGHT-BINDING BAND THEORY
    NATH, K
    ANDERSON, AB
    [J]. PHYSICAL REVIEW B, 1989, 40 (11): : 7916 - 7923
  • [10] PHOTOELECTRON AND ELECTRON-ENERGY LOSS SPECTRA OF EPITAXIAL ALUMINUM NITRIDE
    OLSON, CG
    SEXTON, JH
    LYNCH, DW
    BEVOLO, AJ
    SHANKS, HR
    HARMON, BN
    CHING, WY
    WIELICZKA, DM
    [J]. SOLID STATE COMMUNICATIONS, 1985, 56 (01) : 35 - 37