Reactive magnetron sputtering of Cu2O: Dependence on oxygen pressure and interface formation with indium tin oxide

被引：92

作者：

Deuermeier, Jonas ^{[1
]}

Gassmann, Juergen ^{[1
]}

Broetz, Joachim ^{[1
]}

Klein, Andreas ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Fachbereich Mat & Geowissensch, D-64287 Darmstadt, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 11期

关键词：

FILM SOLAR-CELLS; TRANSPARENT CONDUCTING OXIDES; THIN-FILMS; CUPROUS-OXIDE; IN-SITU; SURFACE; SPECTROSCOPY; SEMICONDUCTORS; PHOTOELECTRON; TEMPERATURES;

D O I：

10.1063/1.3592981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of copper oxides were prepared by reactive magnetron sputtering and structural, morphological, chemical, and electronic properties were analyzed using x-ray diffraction, atomic force microscopy, in situ photoelectron spectroscopy, and electrical resistance measurements. The deposition conditions for preparation of Cu(I)-oxide (Cu2O) are identified. In addition, the interface formation between Cu2O and Sn-doped In2O3 (ITO) was studied by stepwise deposition of Cu2O onto ITO and vice versa. A type II (staggered) band alignment with a valence band offset Delta E-VB = 2.1-2.6 eV depending on interface preparation is observed. The band alignment explains the nonrectifying behavior of p-Cu2O/n-ITO junctions, which have been investigated for thin film solar cells. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3592981]

引用

页数：7

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