Influence of H2O and O2 on threshold voltage shift in organic thin-film transistors:: Deprotonation of SiOH on SiO2 gate-insulator surface

被引：86

作者：

Kumaki, Daisuke ^{[1
]}

Umeda, Tokiyoshi ^{[2
]}

Tokito, Shizuo ^{[2
]}

机构：

[1] Tokyo Inst Technol, Dept Elect Chem, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] NHK Japan Broadcasting Corp, Tokyo 1578510, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期

关键词：

D O I：

10.1063/1.2890853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of H(2)O and O(2) on the transistor characteristics in p- and n-type organic thin-film transistors (OTFTs) fabricated on the SiO(2) gate insulator was investigated. In both p- and n-type OTFTs, the threshold voltage (V(th)) shifted drastically to positive direction after exposure to ambient air and dry air, although the field-effect mobilities in saturation regime were almost unchanged before and after the V(th) shift. The V(th) shifts to the positive direction indicate that negative charges are generated on the SiO(2) gate-insulator surface by exposure to ambient air and dry air. The influence of SiO(-) on the gate-insulator surface and deprotonation processes of SiOH caused by H(2)O and O(2) were discussed as the origin of the significantly positive V(th) shift. (c) 2008 American Institute of Physics.

引用

页数：3

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