Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

被引:450
作者
Lee, Gwan-Hyoung [1 ,2 ]
Yu, Young-Jun [3 ]
Lee, Changgu [4 ]
Dean, Cory [1 ,5 ]
Shepard, Kenneth L. [5 ]
Kim, Philip [3 ]
Hone, James [1 ]
机构
[1] Columbia Univ, Dept Mech Engn, New York, NY 10027 USA
[2] Samsung SKKU Graphene Ctr SSGC, Suwon 440746, South Korea
[3] Columbia Univ, Dept Phys, New York, NY 10027 USA
[4] Sungkyunkwan Univ, Dept Mech Engn, Suwon 440746, South Korea
[5] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
基金
美国国家科学基金会;
关键词
OPTICAL-PROPERTIES; FORCE MICROSCOPY; GRAPHENE; THIN; LAYER; TRANSPORT;
D O I
10.1063/1.3662043
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride (h-BN) on gold-coated mica was investigated using conductive atomic force microscopy. Low-bias direct tunneling was observed in mono-, bi-, and tri-layer h-BN. For all thicknesses, Fowler-Nordheim tunneling (FNT) occurred at high bias, showing an increase of breakdown voltage with thickness. Based on the FNT model, the barrier height for tunneling (3.07 eV) and dielectric strength (7.94 MV/cm) of h-BN are obtained; these values are comparable to those of SiO2. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3662043]
引用
收藏
页数:3
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