Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

被引：450

作者：

Lee, Gwan-Hyoung ^{[1
,2
]}

Yu, Young-Jun ^{[3
]}

Lee, Changgu ^{[4
]}

Dean, Cory ^{[1
,5
]}

Shepard, Kenneth L. ^{[5
]}

Kim, Philip ^{[3
]}

Hone, James ^{[1
]}

机构：

[1] Columbia Univ, Dept Mech Engn, New York, NY 10027 USA

[2] Samsung SKKU Graphene Ctr SSGC, Suwon 440746, South Korea

[3] Columbia Univ, Dept Phys, New York, NY 10027 USA

[4] Sungkyunkwan Univ, Dept Mech Engn, Suwon 440746, South Korea

[5] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 24期

基金：

美国国家科学基金会;

关键词：

OPTICAL-PROPERTIES; FORCE MICROSCOPY; GRAPHENE; THIN; LAYER; TRANSPORT;

D O I：

10.1063/1.3662043

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride (h-BN) on gold-coated mica was investigated using conductive atomic force microscopy. Low-bias direct tunneling was observed in mono-, bi-, and tri-layer h-BN. For all thicknesses, Fowler-Nordheim tunneling (FNT) occurred at high bias, showing an increase of breakdown voltage with thickness. Based on the FNT model, the barrier height for tunneling (3.07 eV) and dielectric strength (7.94 MV/cm) of h-BN are obtained; these values are comparable to those of SiO2. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3662043]

引用

页数：3

共 28 条

[1] Conducting atomic force microscopy studies on local electrical properties of ultrathin SiO2 films [J].

Ando, A ;

Hasunuma, R ;

Maeda, T ;

Sakamoto, K ;

Miki, K ;

Nishioka, Y ;

Sakamoto, T .

APPLIED SURFACE SCIENCE, 2000, 162 (162) :401-405

[2] QUASI-PARTICLE BAND-STRUCTURE OF BULK HEXAGONAL BORON-NITRIDE AND RELATED SYSTEMS [J].

BLASE, X ;

RUBIO, A ;

LOUIE, SG ;

COHEN, ML .

PHYSICAL REVIEW B, 1995, 51 (11) :6868-6875

[3] A new definition of threshold voltage in Tunnel FETs [J].

Boucart, Kathy ;

Ionescu, Adrian Mihai .

SOLID-STATE ELECTRONICS, 2008, 52 (09) :1318-1323

[4] Electron transfer through organic molecules [J].

Bumm, LA ;

Arnold, JJ ;

Dunbar, TD ;

Allara, DL ;

Weiss, PS .

JOURNAL OF PHYSICAL CHEMISTRY B, 1999, 103 (38) :8122-8127

[5] Reproducible measurement of single-molecule conductivity [J].

Cui, XD ;

Primak, A ;

Zarate, X ;

Tomfohr, J ;

Sankey, OF ;

Moore, AL ;

Moore, TA ;

Gust, D ;

Harris, G ;

Lindsay, SM .

SCIENCE, 2001, 294 (5542) :571-574

[6] Boron nitride substrates for high-quality graphene electronics [J].

Dean, C. R. ;

Young, A. F. ;

Meric, I. ;

Lee, C. ;

Wang, L. ;

Sorgenfrei, S. ;

Watanabe, K. ;

Taniguchi, T. ;

Kim, P. ;

Shepard, K. L. ;

Hone, J. .

NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726

[7] Local Electronic Properties of Graphene on a BN Substrate via Scanning Tunneling Microscopy [J].

Decker, Regis ;

Wang, Yang ;

Brar, Victor W. ;

Regan, William ;

Tsai, Hsin-Zon ;

Wu, Qiong ;

Gannett, William ;

Zettl, Alex ;

Crommie, Michael F. .

NANO LETTERS, 2011, 11 (06) :2291-2295

[8] Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric [J].

Fallahazad, Babak ;

Kim, Seyoung ;

Colombo, Luigi ;

Tutuc, Emanuel .

APPLIED PHYSICS LETTERS, 2010, 97 (12)

[9] Electron emission in intense electric fields [J].

Fowler, RH ;

Nordheim, L .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1928, 119 (781) :173-181

[10] Thickness determination of thin and ultra-thin SiO2 films by C-AFM IV-spectroscopy [J].

Frammelsberger, W ;

Benstetter, G ;

Kiely, J ;

Stamp, R .

APPLIED SURFACE SCIENCE, 2006, 252 (06) :2375-2388

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