Conducting atomic force microscopy studies on local electrical properties of ultrathin SiO2 films

被引：24

作者：

Ando, A

Hasunuma, R

Maeda, T

Sakamoto, K

Miki, K

Nishioka, Y

Sakamoto, T

机构：

[1] Electrotech Lab, ETL, Tsukuba, Ibaraki 3058568, Japan

[2] Texas Instruments Tsukuba R&D Ctr Ltd, Tsukuba, Ibaraki 3050841, Japan

来源：

APPLIED SURFACE SCIENCE | 2000年 / 162卷 / 162期

关键词：

silicon oxide; electron tunneling; dielectric breakdown; atomic force microscopy (AFM);

D O I：

10.1016/S0169-4332(00)00223-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have demonstrated the characterizations the local electrical properties of ultrathin (1-4 nm) SiO2/Si(001) structures using a conducting atomic force microscopy with a nanometer-scale resolution in a vacuum (1 x 10(-5) Pa). The measurement in a vacuum enables to reduce the influence of adsorbed water on quantitative current measurements, while there is a problem at the measurement in air of 60% humidity. Fitting to the Fowler-Nordheim equation is good at thicker SiO2 films more than similar to 3 nm. We have also demonstrated the results of continuous current-voltage measurements during the breakdown process by charge injection through a conducting probe. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：401 / 405

页数：5

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