Oxidation of spatially controlled atomically flat Si(001) surface

被引：6

作者：

Ando, A ^{[1
]}

Sakamoto, K ^{[1
]}

Miki, K ^{[1
]}

Matsumoto, K ^{[1
]}

Sakamoto, T ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

来源：

APPLIED SURFACE SCIENCE | 1998年 / 130卷

关键词：

silicon; step-free-surface; oxidation; surface; interface; atomic force microscopy (AFM);

D O I：

10.1016/S0169-4332(98)00050-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have demonstrated oxidation of the spatially controlled atomically flat Si(001) surface by exposing O-2 gas, and investigated morphologies of the SiO2 surface and the SiO2/Si(001) interface using atomic force microscopy. When the O-2 pressure was low at high substrate temperatures (> 400 degrees C), anisotropic surface etching occurred. Monoatomic-deep pits elongated in the direction of the dimer rows were formed on the Si(001) terraces. Thus, the O-2 exposure resulted in the roughening of the atomically flat Si(001) surface. When the O-2 pressure was kept high at the high substrate temperatures on the other hand, the oxidized specimens were free from the etching and had good morphologies at the SiO2 surface and the SiO2/Si(001) interface, whose root-mean-square values of roughness are small compared with a monoatomic-step-height. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：197 / 201

页数：5

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