ELEVATED-TEMPERATURE OXIDATION AND ETCHING OF THE SI(111) 7X7 SURFACE OBSERVED WITH SCANNING-TUNNELING-MICROSCOPY

被引：44

作者：

SEIPLE, J

PECQUET, J

MENG, Z

PELZ, JP

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.578473

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Scanning tunneling microscopy has been used to study the initial oxidation of the Si (111) 7 X 7 surface over the temperature range 400-600-degrees-C. Oxygen-induced etching of the surface is observed for low O2 pressures (< 10(-7) Torr) at temperatures between 500 and 600-degrees-C, causing monolayer-deep holes in the surface and the retraction of step edges. The newly exposed surfaces often reconstruct into metastable 5 X 5 or 9 X 9 structures, as well as the stable 7 X 7 structure.

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页码：1649 / 1653

页数：5

相关论文

共 15 条

[1] INHIBITION OF SILICON OXIDATION DURING LOW-TEMPERATURE EPITAXIAL-GROWTH [J].

AGNELLO, PD ;

SEDGWICK, TO .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (04) :1140-1146

[2] ATOM-RESOLVED SURFACE-CHEMISTRY - THE EARLY STEPS OF SI(111)-7X7 OXIDATION [J].

AVOURIS, P ;

LYO, IW ;

BOZSO, F .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :424-430

[3] NEW RECONSTRUCTIONS ON SILICON (111) SURFACES [J].

BECKER, RS ;

GOLOVCHENKO, JA ;

HIGASHI, GS ;

SWARTZENTRUBER, BS .

PHYSICAL REVIEW LETTERS, 1986, 57 (08) :1020-1023

[4] SURFACE RECONSTRUCTION IN LAYER-BY-LAYER SPUTTERING OF SI(111) [J].

BEDROSSIAN, P ;

KLITSNER, T .

PHYSICAL REVIEW B, 1991, 44 (24) :13783-13786

[5] SI EJECTION AND REGROWTH DURING THE INITIAL-STAGES OF SI(001) OXIDATION [J].

CAHILL, DG ;

AVOURIS, P .

APPLIED PHYSICS LETTERS, 1992, 60 (03) :326-328

[6]

Deal B. E., 1988, PHYSICS CHEM SIO2 SI, P5

[7] KINETICS OF THE SI(111)2 X 1-]5 X 5 AND 7 X 7 TRANSFORMATION STUDIED BY SCANNING TUNNELING MICROSCOPY [J].

FEENSTRA, RM ;

LUTZ, MA .

SURFACE SCIENCE, 1991, 243 (1-3) :151-165

[8]

KOHLER U, 1989, J VAC SCI TECHNOL A, V7, P2860, DOI 10.1116/1.576159

[9] OXIDATION OF SI(111)-(7X7) AS STUDIED BY SCANNING TUNNELING MICROSCOPY [J].

LEIBSLE, FM ;

SAMSAVAR, A ;

CHIANG, TC .

PHYSICAL REVIEW B, 1988, 38 (08) :5780-5783

[10] ELUCIDATION OF THE INITIAL-STAGES OF THE OXIDATION OF SI(111) USING SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY [J].

LYO, IW ;

AVOURIS, P ;

SCHUBERT, B ;

HOFFMANN, R .

JOURNAL OF PHYSICAL CHEMISTRY, 1990, 94 (11) :4400-4403