Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric

被引：101

作者：

Fallahazad, Babak ^{[1
]}

Kim, Seyoung ^{[1
]}

Colombo, Luigi ^{[2
]}

Tutuc, Emanuel ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

[2] Texas Instruments Inc, Dallas, TX 75266 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 12期

关键词：

electron mobility; elemental semiconductors; graphene; hafnium compounds; high-k dielectric thin films; impurity distribution; monolayers; semiconductor-insulator boundaries; SCATTERING; PERFORMANCE; TRANSPORT; GAS;

D O I：

10.1063/1.3492843

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the carrier mobility in monolayer and bilayer graphene with a top HfO2 dielectric, as a function of the HfO2 film thickness and temperature. The results show that the carrier mobility decreases during the deposition of the first 2-4 nm of top dielectric and remains constant for thicker layers. The carrier mobility shows a relatively weak dependence on temperature indicating that phonon scattering does not play a dominant role in controlling the carrier mobility. The data strongly suggest that fixed charged impurities located in close proximity to the graphene are responsible for the mobility degradation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3492843]

引用

页数：3

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