Dielectric Screening Enhanced Performance in Graphene FET

被引：247

作者：

Chen, Fang ^{[1
,2
]}

Xia, Jilin ^{[1
,2
]}

Ferry, David K. ^{[2
]}

Tao, Nongjian ^{[1
,2
]}

机构：

[1] Arizona State Univ, Biodesign Inst, Ctr Bioelect & Biosensors, Tempe, AZ 85287 USA

[2] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

来源：

NANO LETTERS | 2009年 / 9卷 / 07期

关键词：

CHARGED-IMPURITY SCATTERING; BALLISTIC TRANSPORT; GAS;

D O I：

10.1021/nl900725u

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have studied the transport properties of graphene transistors in different solvents with dielectric constant varying over 2 orders of magnitude. Upon increasing the dielectric constant, the carrier mobility increases up to 3 orders of magnitude and reaches similar to 7 x 10(4) cm(2)/v.s at the dielectric constant of similar to 47. This mobility value changes little in higher dielectric constant solvents, which indicates that we are approaching the intrinsic limit of room temperature mobility in graphene supported on SiO2 substrates. The results are discussed in terms of long-range Coulomb scattering originated from the charged impurities underneath graphene.

引用

页码：2571 / 2574

页数：4

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