Quantum shape effects on Zeeman splittings in semiconductor nanostructures

被引：6

作者：

Chen, PC ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 100, Taiwan

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.72.045335

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We develop a general method to calculate Zeeman splittings of electrons and holes in semiconductor nanostructures within the tight-binding framework. The calculation is carried out in the electron-hole picture and is extensible to the excitonic calculation by including the electron-hole Coulomb interaction. The method is suitable for the investigation of quantum shape effects and the anisotropy of the g factors. Numerical results for CdSe and CdTe nanostructures are presented.

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页数：7

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