Full band Monte Carlo study of ballistic effects in nanometer-scaled strained P channel Double Gate MOSFETs

被引：5

作者：

Huet, K. ^{[1
,2
]}

Chassat, C. ^{[1
]}

Nguyen, D. -P. ^{[3
]}

Galdin-Retailleau, S. ^{[1
]}

Bournel, A. ^{[1
]}

Dollfus, P. ^{[1
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, F-91405 Orsay, France

[2] ST Microelect, F-38926 Crolles, France

[3] Freescale Semicond, F-38926 Crolles, France

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1 | 2008年 / 5卷 / 01期

关键词：

D O I：

10.1002/pssc.200776558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ballistic transport in a 20 nm long P type Double Gate (DG) MOSFET structure is studied using a Monte Carlo (MC) technique. Hole transport being dominated by the strong anisotropy of the valence dispersion relation, the full bandstructure obtained by a 30 band k.p calculation is used. The valence bandstructure is shown to be highly anisotropic. The deformation induced by strain is different whether biaxial tensile or compressive strain is applied. This will have an influence on the final density of states (DOS) and scattering rates, closely related to carrier mobility. In the on-state of the transistor, we demonstrate the out-of-equilibrium, nature of carrier transport in the entire channel. Microscopic quantities analysis with strain shows the influence of scattering, bandstructure change and ballistic effects on hole transport. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：43 / +

页数：2

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