Reactive ion (N2+) beam pretreatment of sapphire for GaN growth

被引:6
作者
Byun, D
Jeong, J
Kim, HJ
Koh, SK
Choi, WK
Park, D
Kum, DW
机构
[1] Korea Univ, Dept Mat Sci, Sungbuk Ku, Seoul 136701, South Korea
[2] Korea Inst Sci & Technol, Thin Film Technol Res Ctr, Seoul 130650, South Korea
[3] Korea Inst Sci & Technol, Div Chem Engn, Seoul 130650, South Korea
关键词
reactive ion beam; gallium nitride; atomic force microscopy; chemical vapor deposition;
D O I
10.1016/S0040-6090(98)00561-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Efficiency and lifetime of GaN based light emitting diodes and laser diodes can be improved by proper choice of substrate or deliberate modification of the substrate surface before deposition. Buffer growth or nitridation is the usual choices of surface modifications for GaN deposition to improve crystal duality and optical properties. It was our intention to study a possibility that a reactive ion beam (RIB) pretreatment of the sapphire substrate at room temperature could substitute the nitridation process at high temperature above 1000 degrees C. The optical property of GaN films deposited on the sapphire surfaces pretreated by the reactive ion beam has improved significantly. Current observations clearly demonstrates that the RIB pretreatment of the sapphire surface can be used to improve the GaN films grown by metalorganic chemical vapor deposition (MOCVD). (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:151 / 153
页数:3
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