Observation of compensating Ga vacancies in highly Si-doped GaAs

被引：45

作者：

Laine, T

Saarinen, K

Makinen, J

Hautojarvi, P

Corbel, C

Pfeiffer, LN

Citrin, PH

机构：

[1] AT&T BELL LABS,LUCENT TECHNOL,MURRAY HILL,NJ 07974

[2] CTR ETUD SACLAY,INST NATL SCI & TECH NUCL,F-91191 GIF SUR YVETTE,FRANCE

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.54.R11050

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Positron annihilation experiments have been performed to study the type and concentration of compensating defects in highly Si-doped GaAs grown by molecular-beam epitaxy (MBE). The results show the presence of both Ga vacancies and negative ion defects, each of which act as accepters in n-type GaAs. The concentrations of both types of defects increase strongly for Si concentrations exceeding 5x10(18) cm(-3). At [Si]greater than or equal to 5x10(19) cm(-3), the concentrations of Ga vacancies and negative ions are comparable, and their sum represents a substantial fraction of the total concentration of Si itself. The results provide direct evidence that Ga vacancies play an important role in the electrical deactivation of highly Si-doped MBE-grown GaAs.

引用

页码：11050 / 11053

页数：4

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