Negative Bias Temperature Instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics

被引：35

作者：

Kaczer, B

Arkhipov, V

Jurczak, M

Groeseneken, G

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, ESAT Dept, Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 80卷

关键词：

silicon dioxide; silicon oxynitride; negative bias temperature instability; dispersive transport; hydrogen;

D O I：

10.1016/j.mee.2005.04.054

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The acceleration of Negative Bias Temperature Instability (NBTI) in oxynitride gate dielectrics is explained within the framework of disorder-controlled hydrogen kinetics. Nitrogen is assumed to introduce deeper localized hydrogen states in gate oxide film, thus increasing the dispersion of hydrogen transport. The dispersion parameter is linked with the temperature-dependent NBTI power-law exponent, while hydrogen hopping frequency is inferred from the temperature dependence of NBTI power-law prefactor. NBTI exponents up to 0.5 are explained by transport of charged hydrogen.

引用

收藏

页码：122 / 125

页数：4

相关论文

共 10 条

[1] A comprehensive model of PMOS NBTI degradation [J].

Alam, MA ;

Mahapatra, S .

MICROELECTRONICS RELIABILITY, 2005, 45 (01) :71-81

[2] Evidence for two distinct positive trapped charge components in NBTI stressed p-MOSFETs employing ultrathin CVD silicon nitride gate dielectric [J].

Ang, DS ;

Pey, KL .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (09) :637-639

[3] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

DEAL, BE ;

SKLAR, M ;

GROVE, AS ;

SNOW, EH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+

[4] On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's [J].

Denais, M ;

Bravaix, A ;

Huard, V ;

Parthasarathy, C ;

Ribes, G ;

Perrier, F ;

Rey-Tauriac, Y ;

Revil, N .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :109-112

[5] Reaction-dispersive proton transport model for negative bias temperature instabilities [J].

Houssa, M ;

Aoulaiche, M ;

De Gendt, S ;

Groeseneken, G ;

Heyns, MM ;

Stesmans, A .

APPLIED PHYSICS LETTERS, 2005, 86 (09) :1-3

[6]

HUARD V, 2003, 13 BIANN INS FILMS S, pPS19

[7] Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification [J].

Kaczer, B ;

Arkhipov, V ;

Degraeve, R ;

Collaert, N ;

Groeseneken, G ;

Goodwin, M .

2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL, 2005, :381-387

[8] Temperature dependence of the negative bias temperature instability in the framework of dispersive transport [J].

Kaczer, B ;

Arkhipov, V ;

Degraeve, R ;

Collaert, N ;

Groeseneken, G ;

Goodwin, M .

APPLIED PHYSICS LETTERS, 2005, 86 (14) :1-3

[9]

Mitani Y, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P509, DOI 10.1109/IEDM.2002.1175891

[10]

Zafar S, 2004, 2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P208