Conductance switching in organic ferroelectric field-effect transistors

被引：30

作者：

Asadi, Kamal ^{[1
,2
]}

Blom, Paul W. M. ^{[1
,3
]}

de Leeuw, Dago M. ^{[1
,2
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[2] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

[3] Holst Ctr, NL-5605 KN Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 05期

关键词：

POLYMER; DENSITY;

D O I：

10.1063/1.3621857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Staggered bottom-contact top-gate organic ferroelectric field-effect transistors are fabricated with poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) as ferroelectric gate and poly[bis(4-phenyl)( 2,4,6-trimethylphenyl)amine] as semiconductor. Polarization reversal of the ferroelectric gate is monitored by displacement transients in the gate current. By varying both the source and drain biases and by using fully and partially polarized transistors, we show that conductance switching only requires polarization of P(VDF-TrFE) at the source electrode. Polarization at the drain is irrelevant and does not impede charge extraction. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3621857]

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页数：3

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