Transport, optical and magnetotransport properties of hetero-epitaxial InAsxSb1-x/GaAs(x ≤ 0.06) and bulk InAsxSb1-x (x ≤ 0.05) crystals:: experiment and theoretical analysis

被引：4

作者：

Bansal, B ^{[1
]}

Dixit, VK ^{[1
]}

Venkataraman, V ^{[1
]}

Bhat, HL ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 20卷 / 3-4期

关键词：

InAsSb; InSb; narrow gap semiconductors; magnetotransport; Hall mobility; Boltzmann equation;

D O I：

10.1016/j.physe.2003.08.017

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We briefly review the growth and structural properties of InAsxSb1-x (x less than or equal to 0.05) bulk single crystals and InAsxSb1-x (x less than or equal to 0.06) epitaxial films grown on semi-insulating GaAs substrates. Temperature-dependent transport measurements on these samples are then correlated with the information obtained from structural (XRD, TEM, SEM) and optical (FTIR absorption) investigations. The temperature dependence of mobility and the Hall coefficient are theoretically modelled by exactly solving the linearized Boltzmann transport equation by inversion of the collision matrix and the relative role of various scattering mechanisms in limiting the low temperature and 300 K mobility is estimated. Finally, the first observation of Shubnikov oscillations in InAsSb is discussed. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：272 / 277

页数：6

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