Thermal activation effect on spin transfer switching in magnetic tunnel junctions

被引:41
作者
Higo, Y [1 ]
Yamane, K [1 ]
Ohba, K [1 ]
Narisawa, H [1 ]
Bessho, K [1 ]
Hosomi, M [1 ]
Kano, H [1 ]
机构
[1] Sony Corp, Informat Technol Labs, Solid State Memories Res Lab, Tagajo, Miyagi, Japan
关键词
D O I
10.1063/1.2011795
中图分类号
O59 [应用物理学];
学科分类号
摘要
A calculation of the intrinsic spin transfer switching current I-c0 is realized in the magnetic tunnel junctions (MTJs). I-c0 is determined by the distribution of I-c in repeated measurements, assuming the linear decrease of the thermal stability by increasing the spin-polarized current. The spin transfer torque is found to be proportional to eta(I)I with the applied current I and I-dependent spin polarization eta(I). Even in case that I is limited less than I-c due to the tunnel barrier breakdown, I-c0 is calculated with an assisting external magnetic field and making better use of the magnetic phase diagram. In our MTJs, the average intrinsic switching current density was 6.4 MA/cm(2). (c) 2005 American Institute of Physics.
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页数:3
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