Epitaxial growth of (103)-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100)

被引：32

作者：

Lee, HN ^{[1
]}

Senz, S ^{[1
]}

Pignolet, A ^{[1
]}

Hesse, D ^{[1
]}

机构：

[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 19期

关键词：

D O I：

10.1063/1.1370984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Non-c-axis-oriented ferroelectric SrBi2Ta2O9 (SBT) epitaxial thin films with (103) orientation have been grown by pulsed laser deposition on buffered Si(100) substrates. For the buffer layers, a heterostructure consisting of MgO(111)/YSZ(100)/Si(100) was applied to induce the growth of a (111)-oriented SrRuO3 (SRO) bottom electrode. X-ray diffraction theta -2 theta and phi scans revealed well-defined orientation relationships, viz. SBT(103)parallel to SRO(111)parallel to MgO(111)parallel to YSZ(100)parallel to Si(100); SBT[010]parallel to SRO[0(1) over bar1]parallel to MgO[0(1) over bar1]parallel to YSZ[001]parallel to Si[001]. The ferroelectric measurements of the (103)-oriented SBT films showed a remanent polarization (P-r) of 5.2 muC/cm(2) and a coercive field (E-c) of 76 kV/cm for a maximum applied electric field of 440 kV/cm. (C) 2001 American Institute of Physics.

引用

页码：2922 / 2924

页数：3

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