Cavity Enhanced Internal Photoemission Effect in Silicon Photodiode for Sub-Bandgap Detection

被引：34

作者：

Casalino, Maurizio ^{[1
]}

Coppola, Giuseppe ^{[1
]}

Gioffre, Mariano ^{[1
]}

Iodice, Mario ^{[1
]}

Moretti, Luigi ^{[2
]}

Rendina, Ivo ^{[1
]}

Sirleto, Luigi ^{[1
]}

机构：

[1] Napoli Consiglio Nazl Ric IMM CNR, Ist Microelettron & Microsistemi Sez, I-80131 Naples, Italy

[2] Univ Naples 2, Dipartimento Matemat, I-81100 Caserta, Italy

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2010年 / 28卷 / 22期

关键词：

Fabry-Perot; internal photoemission; photodetectors; resonant cavity enhanced; silicon; HIGH-SPEED; PHOTODETECTORS;

D O I：

10.1109/JLT.2010.2081346

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a new approach for the near infrared sub-bandgap detection in Si-based devices is investigated. In particular, the design, the realization and the characterization of a back illuminated silicon resonant cavity enhanced Schottky photodetectors, working at 1.55 mu m, are reported. The photodetectors are constituted by Fabry-Perot microcavity incorporating a Schottky diode. The working principle is based on the internal photoemission effect enhanced by cavity effect. Performances devices in terms of responsivity, free spectral range, finesse and estimated bandwidth are reported.

引用

页码：3266 / 3272

页数：7

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