Direct graphene growth on MgO: origin of the band gap

被引:57
作者
Gaddam, Sneha [1 ,2 ]
Bjelkevig, Cameron [1 ,2 ,4 ]
Ge, Siping [1 ,2 ,5 ]
Fukutani, Keisuke [3 ]
Dowben, Peter A. [3 ]
Kelber, Jeffry A. [1 ,2 ]
机构
[1] Univ N Texas, Dept Chem, Denton, TX 76203 USA
[2] Univ N Texas, Ctr Elect Mat Proc & Integrat, Denton, TX 76203 USA
[3] Univ Nebraska, Dept Phys & Astron, Nebraska Ctr Nanostruct & Mat, Lincoln, NE 68588 USA
[4] Intel Corp, Rio Rancho, NM 87124 USA
[5] China Agr Univ, Dept Phys, Beijing 100094, Peoples R China
关键词
EPITAXIAL GRAPHENE; GLASS;
D O I
10.1088/0953-8984/23/7/072204
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A 2.5 monolayer (ML) thick graphene film grown by chemical vapor deposition of thermally dissociated C2H4 on MgO(111), displays a significant band gap. The apparent six-fold low energy electron diffraction (LEED) pattern actually consists of two three-fold patterns with different 'A' and 'B' site diffraction intensities. Similar effects are observed for the LEED patterns of a 1 ML carbon film derived from annealing adventitious carbon on MgO(111), and for a 1.5 ML thick graphene film grown by sputter deposition on the 1 ML film. The LEED data indicate different electron densities at the A and B sites of the graphene lattice, suggesting that the observed band gap results from lifting the graphene HOMO/LUMO degeneracy at the Dirac point. The data also indicate that disparities in A site/B site LEED intensities decrease with increasing carbon overlayer thickness, suggesting that the graphene band gap size decreases with increasing number of graphene layers on MgO(111).
引用
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页数:4
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