Quantification of the carrier absorption losses in Si-nanocrystal rich rib waveguides at 1.54 μm

被引：44

作者：

Navarro-Urrios, D. ^{[1
]}

Pitanti, A. ^{[1
]}

Daldosso, N. ^{[1
]}

Gourbilleau, F. ^{[2
]}

Rizk, R. ^{[2
]}

Pucker, G. ^{[3
]}

Pavesi, L. ^{[1
]}

机构：

[1] Univ Trent, Dipartimento Fis, Lab Nanosci, I-38050 Trento, Italy

[2] CNRS, CIMAP, UMR 6252, F-14050 Caen, France

[3] Gfn Bruno Kessler, MicroTechnol Lab, I-38050 Trento, Italy

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 05期

关键词：

D O I：

10.1063/1.2840181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A detailed study of the carrier absorption (CA) mechanism in multilayered silicon-nanocrystals (Si-nc) rib waveguides is reported. A pump (532 nm) and probe (1535 nm) technique is used to assess two loss mechanisms due to optical excitation of the system: one characterized by slow (seconds) dynamics related to heating and the other characterized by fast (microsecond) dynamics associated to CA mechanisms within the Si-nc. CA losses increase with pumping flux of up to 6 dB/cm for 3x10(20) photons/cm(2) s. By comparing the temporal dynamics of CA losses and time resolved photoluminescence, we suggest that both are determined by exciton generation and recombination. (C) 2008 American Institute of Physics.

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页数：3

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