Control of Efficiency, Brightness, and Recombination Zone in Light-Emitting Field Effect Transistors

被引：80

作者：

Hsu, Ben B. Y. ^{[1
]}

Duan, Chunhui ^{[4
]}

Namdas, Ebinazar B. ^{[2
]}

Gutacker, Andrea ^{[1
]}

Yuen, Jonathan D. ^{[1
]}

Huang, Fei ^{[4
]}

Cao, Yong ^{[4
]}

Bazan, Guillermo C. ^{[1
]}

Samuel, Ifor D. W. ^{[3
]}

Heeger, Alan J. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA

[2] Univ Queensland, Ctr Organ Photon & Elect, Brisbane, Qld, Australia

[3] Univ St Andrews, Organ Semicond Ctr, SUPA, Sch Phys & Astron, St Andrews KY16 9AJ, Fife, Scotland

[4] S China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou, Guangdong, Peoples R China

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 09期

基金：

美国国家科学基金会;

关键词：

organic semiconductors; light emitting field effect transistor; split-gate; and injection; GATE; AMBIPOLAR; INJECTION;

D O I：

10.1002/adma.201103513

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The split-gate light emitting field effect transistors (SG-LEFETs) demonstrate a new strategy for ambipolar LEFETs to achieve high brightness and efficiency simultaneously. The SG architecture forces largest quantity of opposite charges on Gate 1 and Gate 2 area to meet in the center of the channel. By actively and independently controlling current injection from separated gate electrodes within transporting channel, high brightness can be obtained in the largest injection current regime with highest efficiency. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1171 / 1175

页数：5

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