Low-Voltage, Low-Power, Organic Light-Emitting Transistors for Active Matrix Displays

被引:411
作者
McCarthy, M. A. [1 ,2 ]
Liu, B. [1 ]
Donoghue, E. P. [1 ]
Kravchenko, I. [3 ]
Kim, D. Y. [2 ]
So, F. [2 ]
Rinzler, A. G. [1 ]
机构
[1] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[3] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37830 USA
基金
美国国家科学基金会;
关键词
THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; DEPENDENCE; DEVICE; SI;
D O I
10.1126/science.1203052
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Intrinsic nonuniformity in the polycrystalline-silicon backplane transistors of active matrix organic light-emitting diode displays severely limits display size. Organic semiconductors might provide an alternative, but their mobility remains too low to be useful in the conventional thin-film transistor design. Here we demonstrate an organic channel light-emitting transistor operating at low voltage, with low power dissipation, and high aperture ratio, in the three primary colors. The high level of performance is enabled by a single-wall carbon nanotube network source electrode that permits integration of the drive transistor and the light emitter into an efficient single stacked device. The performance demonstrated is comparable to that of polycrystalline-silicon backplane transistor-driven display pixels.
引用
收藏
页码:570 / 573
页数:4
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